2SJ278 Key Features
- Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable fo
- Part: 2SJ278
- Manufacturer: Hitachi Semiconductor
- Size: 42.21 KB
Related Hitachi Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 2SJ217 | P-Channel MOSFET |
| 2SJ221 | P-Channel MOSFET |
| 2SJ222 | P-Channel MOSFET |
| 2SJ244 | P-Channel MOSFET |
| 2SJ245 | Silicon P-Channel MOS FET |
2SJ278 Description
2SJ278 Silicon P-Channel MOS FET Application High speed power switching.