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2SJ278 Datasheet P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ278 Silicon P-Channel MOS FET Application High speed power.

Key Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ278 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temp.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
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2SJ245 Silicon P-Channel MOS FET
2SJ245L Silicon P-Channel MOS FET
2SJ245S Silicon P-Channel MOS FET
2SJ246 SILICON P-CHANNEL MOS FET
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2SJ248 P-Channel MOSFET

2SJ278 Distributor