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2SJ245 - Silicon P-Channel MOS FET

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source.
  • Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 23 D 12 3 1. Gate G 2. Drain 3. Source 4. Drain S November 1996 2SJ245(L), 2SJ245(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ245L Silicon P-Channel MOS FET
2SJ245S Silicon P-Channel MOS FET
2SJ244 P-Channel MOSFET
2SJ246 SILICON P-CHANNEL MOS FET
2SJ247 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ245(L), 2SJ245(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 23 D 12 3 1. Gate G 2. Drain 3. Source 4. Drain S November 1996 2SJ245(L), 2SJ245(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.