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2SJ246 - SILICON P-CHANNEL MOS FET

General Description

µs

Key Features

  • 12 3 12 3.
  • Low on.
  • resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source.
  • Suitable for Switching regulator, DC.
  • DC converter 2, 4 1 3 1. Gate 2. Drain 3. Source 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) e DataShe DataSheet4U. com Symbol Ratings Unit.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ244 P-Channel MOSFET
2SJ245 Silicon P-Channel MOS FET
2SJ245L Silicon P-Channel MOS FET
2SJ245S Silicon P-Channel MOS FET
2SJ247 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 2SJ246 L , 2SJ246 S SILICON P-CHANNEL MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 12 3 • • • • Low on–resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source. • Suitable for Switching regulator, DC – DC converter 2, 4 1 3 1. Gate 2. Drain 3. Source 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) e DataShe DataSheet4U.