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2SJ245L - Silicon P-Channel MOS FET

Download the 2SJ245L datasheet PDF. This datasheet also covers the 2SJ245 variant, as both devices belong to the same silicon p-channel mos fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source.
  • Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 23 D 12 3 1. Gate G 2. Drain 3. Source 4. Drain S November 1996 2SJ245(L), 2SJ245(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SJ245_HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ245S P-Channel MOSFET VBsemi
2SJ240 Field Effect Transistor Toshiba
2SJ243 P-Channel MOSFET NEC
2SJ244 P-Channel MOSFET Renesas
2SJ200 P-Channel MOSFET Toshiba Semiconductor

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ245 Silicon P-Channel MOS FET
2SJ245S Silicon P-Channel MOS FET
2SJ244 P-Channel MOSFET
2SJ246 SILICON P-CHANNEL MOS FET
2SJ247 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SJ245(L), 2SJ245(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Outline DPAK-1 4 4 1 23 D 12 3 1. Gate G 2. Drain 3. Source 4. Drain S November 1996 2SJ245(L), 2SJ245(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.