Datasheet Summary
2SJ245(L), 2SJ245(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
- Low on-resistance
- High speed switching
- Low drive current
- 4 V gate drive device can be driven from 5 V source
- Suitable for switching regulator, DC-DC converter
Outline
DPAK-1
4 4
1 23
12 3
1. Gate
2. Drain
3. Source
4. Drain
November 1996
2SJ245(L),...
