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2SJ361 Datasheet P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ361 Silicon P-Channel MOS FET Application High speed power.

Key Features

  • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ361 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse).
  • I DR Pch.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ363 P-Channel MOSFET
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2SJ319S P-Channel MOSFET
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2SJ351 P-Channel MOSFET
2SJ352 P-Channel MOSFET
2SJ386 P-Channel MOSFET
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2SJ361 Distributor