2SJ361 Overview
2SJ361 Silicon P-Channel MOS FET Application High speed power switching.
2SJ361 Key Features
- Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source
2SJ361 Datasheet Details
| Part number | 2SJ361 |
|---|---|
| Datasheet | 2SJ361_HitachiSemiconductor.pdf |
| File Size | 43.09 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | P-Channel MOSFET |
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