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2SJ363 - P-Channel MOSFET

Key Features

  • Low on-resistance.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ363 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse).
  • I DR Pch.
  • Tch Tstg 2 1 Ratings.
  • 30.

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Part Number Description
2SJ361 P-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SJ363 Silicon P-Channel MOS FET Application Low frequency power switching Features • Low on-resistance • Low drive current • 4 V gate drive device can be driven from 5 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ363 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –30 ±20 –2 –4 –2 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Value on the alumina ceramic board (12.5×20×0.7 mm) 3. Marking is “PY”.