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2SJ363 Datasheet P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ363 Silicon P-Channel MOS FET Application Low frequency power.

Key Features

  • Low on-resistance.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ363 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse).
  • I DR Pch.
  • Tch Tstg 2 1 Ratings.
  • 30.

More Datasheets from Hitachi Semiconductor (now Renesas)

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2SJ363 Distributor