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2SJ483 Datasheet P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st.

Key Features

  • Low on-resistance R DS(on) = 0.08Ω typ (at VGS =.
  • 10 V, I D =.
  • 2.5 A).
  • 4V gate drive devices.
  • Large current capacitance ID =.
  • 5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SJ483 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
  • 30 ±20.
  • 5.
  • 20.
  • 5 0.9 150.
  • 55 to +150.

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