2SJ483 Overview
2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st.
2SJ483 Key Features
- Low on-resistance R DS(on) = 0.08Ω typ (at VGS = -10 V, I D = -2.5 A)
- 4V gate drive devices
- Large current capacitance ID = -5 A
2SJ483 Datasheet Details
| Part number | 2SJ483 |
|---|---|
| Datasheet | 2SJ483_HitachiSemiconductor.pdf |
| File Size | 43.78 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | P-Channel MOSFET |
|
|