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2SJ483
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-519 1st. Edition Features
• Low on-resistance R DS(on) = 0.08Ω typ (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A
Outline
TO-92MOD.
D
G
3 S
2
1
1. Source 2. Drain 3. Gate
2SJ483
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –30 ±20 –5 –20 –5 0.9 150 –55 to +150
Unit V V A A A W °C °C
Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1.
2SJ483 Datasheet
