Datasheet Summary
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-519 1st. Edition Features
- Low on-resistance R DS(on) = 0.08Ω typ (at VGS =
- 10 V, I D =
- 2.5 A)
- 4V gate drive devices.
- Large current capacitance ID =
- 5 A
Outline
TO-92MOD.
3 S
1. Source 2. Drain 3....