2SJ484 Overview
2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd.
2SJ484 Key Features
- Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS = -10V, ID = -1A)
- Low drive current
- High speed switching
- 4V gate drive devices
2SJ484 datasheet by Hitachi Semiconductor (now Renesas).
| Part number | 2SJ484 |
|---|---|
| Datasheet | 2SJ484_HitachiSemiconductor.pdf |
| File Size | 43.60 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | P-Channel MOSFET |
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2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd.
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