Datasheet Summary
Silicon P-Channel MOS FET High Speed Power Switching
ADE-208-501 A 2nd. Edition Features
- Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =
- 10V, ID =
- 1A)
- Low drive current
- High speed switching
- 4V gate drive devices.
Outline
UPAK 2 3 1
4 D
1. Gate 2. Drain 3. Source 4....