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2SJ484 Datasheet P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd.

Key Features

  • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =.
  • 10V, ID =.
  • 1A).
  • Low drive current.
  • High speed switching.
  • 4V gate drive devices. Outline UPAK 2 3 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ484 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS V.

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