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2SJ505L Datasheet P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st.

Key Features

  • Low on-resistance R DS(on) = 0.017Ω typ.
  • Low drive current.
  • 4V gate drive devices.
  • High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ505(L), 2SJ505(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage tempera.

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