The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SJ505(L), 2SJ505(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-547 Target specification 1st. Edition Features
• Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
LDPAK
4 D 1 G 1 4
2
3
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SJ505(L), 2SJ505(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3 3 2 1
Ratings –60 ±20 –50 –200 –50 –50 214 75 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR*
Pch* Tch Tstg
Notes: 1.
2SJ505L Datasheet
