Datasheet Summary
2SJ505(L), 2SJ505(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-547 Target specification 1st. Edition Features
- Low on-resistance R DS(on) = 0.017Ω typ.
- Low drive current.
- 4V gate drive devices.
- High speed switching.
Outline
LDPAK
4 D 1 G 1 4
1. Gate 2. Drain 3. Source 4. Drain
2SJ505(L),...
