2SJ505S - P-Channel MOSFET

VBsemi

Key Features

TrenchFET® Power MOSFET.
Package with Low Thermal Resistance.
100 % Rg Tested Available RoHS.

2SJ505S p-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	2SJ505S
Manufacturer	VBsemi
File Size	249.55 KB
Description	P-Channel MOSFET
Datasheet	2SJ505S Datasheet

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Full PDF Text Transcription (Reference)

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2SJ505S-VB 2SJ505S-VB Datasheet P-Channel 60-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.0065 at VGS = - 10 V 0.0085 at VGS = - 4.5 V ID (A)d - 110 FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg Tested Available RoHS* COMPLIANT TO-263 S G G DS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currentd (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyd IAS L = 0.