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2SJ526
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-579B (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
2SJ526
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings –60 ±20 –12 –48 –12 –12 12 25 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
2SJ526 Datasheet
