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2SJ526 Datasheet Silicon P-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ526 Silicon P Channel MOS FET High Speed Power Switching ADE-208-579B (Z) 4th.

Key Features

  • Low on-resistance R DS(on) = 0.11 Ω typ.
  • Low drive current.
  • 4 V gete drive devices.
  • High speed switching Outline TO.
  • 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ526 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS I.

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