Download 2SJ526 Datasheet PDF
Inchange Semiconductor
2SJ526
2SJ526 is P-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES - Drain-source on-resistance: RDS(on) ≤ 110mΩ@10V - Fast Switching Speed - Low drive current - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - High fast switching Power Supply - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 Gate-Source Voltage ±20 Drain Current-Continuous -12 Drain Current-Single Pulsed -48 Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature ℃ Tstg Storage Temperature -55~150...