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2SJ526 - P-Channel MOSFET

Key Features

  • Drain-source on-resistance: RDS(on) ≤ 110mΩ@10V.
  • Fast Switching Speed.
  • Low drive current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

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isc P-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 110mΩ@10V ·Fast Switching Speed ·Low drive current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -12 A IDM Drain Current-Single Pulsed -48 A PD Total Dissipation @TC=25℃ 25 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SJ526 isc website：www.iscsemi.