2SJ547 Datasheet PDF (Silicon P-Channel MOSFET) | Download Hitachi Semiconductor 2SJ547

2SJ547 - Silicon P-Channel MOSFET

Features

Low on-resistance R DS(on) = 0.16 Ω typ.
4 V gete drive devices.
High speed switching Outline TO.
220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ547 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
60 ±20.
10.
40.
10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche curr.

Datasheet Details

Part number	2SJ547
Manufacturer	Hitachi Semiconductor
File Size	53.94 KB
Description	Silicon P-Channel MOSFET
Datasheet	2SJ547 Datasheet
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Full PDF Text Transcription

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2SJ547 Silicon P Channel MOS FET High Speed Power Switching ADE-208-658A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.16 Ω typ. • 4 V gete drive devices • High speed switching Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ547 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –10 –40 –10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –10 8.5 20 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3.

Published: Mar 30, 2005 |