Datasheet Summary
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-652B (Z) 3rd. Edition Jun 1998 Features
- Low on-resistance R DS(on) = 0.042 Ω typ.
- Low drive current.
- 4V gate drive devices.
- High speed switching.
Outline
TO- 220AB
1 2 S 3
1. Gate 2. Drain (Flange) 3....