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2SJ549(L), 2SJ549(S)
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance RDS (on) = 0.11 Ω typ.
• Low drive current • 4 V gate drive devices • High speed switching
REJ03G0896-0400 Rev.4.00
Jun 05, 2006
Outline
RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (L) )
(Package name: LDPAK (S)-(1) )
D 4
4
12 3
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Rev.4.00 Jun 05, 2006 page 1 of 8
2SJ549(L), 2SJ549(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
2SJ549 Datasheet
