2SJ549 Datasheet | Renesas

Description High speed power switching Features - Low on-resistance RDS (on) = 0.11 Ω typ. - Low drive current - 4 V gate drive devices - High speed switching REJ03G0896-0400 Rev.4.00 Jun 05, 2006 Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) ) D 4 12 3 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 Jun 05, 2006 page 1 of 8 2SJ549(L), 2SJ549(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value - 60 ±20 - 12 - 48 - 12 - 12 12 50 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A m J W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state...