2SJ549S - Silicon P-Channel MOSFET

Renesas

Download the 2SJ549S datasheet PDF. This datasheet also covers the 2SJ549 variant, as both devices belong to the same silicon p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

High speed power switching

Key Features

Low on-resistance RDS (on) = 0.11 Ω typ.
Low drive current.
4 V gate drive devices.
High speed switching REJ03G0896-0400 Rev.4.00 Jun 05, 2006 Outline.

📥 Download Datasheet

2SJ549S silicon p-channel mosfet by Renesas - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SJ549-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SJ549S
Manufacturer	Renesas
File Size	84.85 KB
Description	Silicon P-Channel MOSFET
Datasheet	2SJ549S Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SJ549S	Silicon P-Channel MOSFET	Hitachi Semiconductor
2SJ549	Silicon P-Channel MOSFET	Hitachi Semiconductor
2SJ549L	Silicon P-Channel MOSFET	Hitachi Semiconductor
2SJ540	Silicon P-Channel MOSFET	Hitachi Semiconductor
2SJ541	Silicon P-Channel MOSFET	Hitachi Semiconductor

Other Datasheets by Renesas

Part Number	Description
2SJ549	Silicon P-Channel MOSFET
2SJ549L	Silicon P-Channel MOSFET
2SJ548	Silicon P-Channel MOSFET
2SJ527	P-Channel MOSFET
2SJ527L	P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SJ549(L), 2SJ549(S) Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching REJ03G0896-0400 Rev.4.00 Jun 05, 2006 Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) ) D 4 4 12 3 123 G S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 Jun 05, 2006 page 1 of 8 2SJ549(L), 2SJ549(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.