• Part: 2SJ548
  • Description: Silicon P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 79.13 KB
Download 2SJ548 Datasheet PDF
Renesas
2SJ548
Description High speed power switching Features - Low on-resistance RDS (on) = 0.075 Ω typ. - Low drive current. - 4 V gate drive devices. - High speed switching. Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) REJ03G0895-0300 (Previous: ADE-208-639A) Rev.3.00 Sep 07, 2005 D 1. Gate 2. Drain 3. Source Rev.3.00 Sep 07, 2005 page 1 of 7 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value - 60 ±20 - 15 - 60 - 15 - 15 19 30 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A m J W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage...