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2SJ548 Datasheet Silicon P-Channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SJ548 Silicon P Channel MOS FET High Speed Power Switching ADE-208-639A (Z) 2nd.

Key Features

  • Low on-resistance R DS(on) = 0.075Ω typ.
  • Low drive current.
  • 4V gate drive devices.
  • High speed switching. Outline TO.
  • 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ548 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
  • 60 ±20.
  • 15.
  • 60.
  • 15 Unit V V A A A A mJ W °C °C Body-drain diode reverse dra.

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