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2SK1296 Datasheet Silicon N-channel Mos Fet

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK1296 Silicon N-Channel MOS FET Application TO–220AB High speed power.

Key Features

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  • Low on-resistance High speed switching Low drive current 4 V gate drive device.
  • Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel di.

2SK1296 Distributor

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