Datasheet Details
| Part number | 2SK1296 |
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| Manufacturer | Hitachi Semiconductor (now Renesas) |
| File Size | 75.93 KB |
| Description | Silicon N-Channel MOS FET |
| Datasheet |
 2SK1296 Datasheet
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General Description
Power vs.
Key Features
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- Low on-resistance High speed switching Low drive current 4 V gate drive device.
- Can be driven from 5 V source.
- Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel di.