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2SK1297 - Silicon N-Channel MOS FET

Key Features

  • x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1297 Absolute Maximum Ratings (Ta = 25GC) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www. DataSheet4U. com Channel dissipation Symbol VDSS VGSS.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK1296 Silicon N-Channel MOS FET
2SK1298 Silicon N-Channel MOSFET
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2SK1299S Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1297 Silicon N-Channel MOS FET www.DataSheet4U.com November 1996 Application High speed power switching Features x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1297 Absolute Maximum Ratings (Ta = 25GC) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www.DataSheet4U.com Channel dissipation Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings 60 Unit V V A A A W r20 40 160 40 100 150 –55 to +150 Channel temperature Storage temperature Notes 1.