Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
LDPAK 4 4
1 2 1 D G 2 3
3
S
1. Gate 2. Drain 3. Source 4. Drain
2SK1315(L)(S), 2SK1316(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipa.
Full PDF Text Transcription for 2SK1315 (Reference)
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2SK1315. For precise diagrams, and layout, please refer to the original PDF.
2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current ...
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es • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
More Datasheets from Hitachi Semiconductor (now Renesas)
2SK1315 Datasheet
