2SK2329L Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2SK2329(L), 2SK2329(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 30 ±10 10 40 10 20 150 - 55 to +150 Unit V V A A A W °C °C 2SK2329(L), 2SK2329(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 30 ±10 - - 0.4 - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 - - - - - - - - - Typ - - - - - 0.03 0.04 18 1250 540 120 20 145 225 125 0.9 100 Max - - ±10 100 1.4 0.04 0.06 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, di F / dt = 20 A / µs Test Conditions I D = 10 m A, VGS = 0 I G = ±200 µA, VDS = 0 VGS = ±6.5 V, VDS = 0 VDS = 25 V, VGS = 0 I D = 1 m A, VDS = 10 V ID = 5 A VGS = 4 V- 1 ID = 5 A VGS = 2.5 V- 1 ID = 5 A VDS = 10 V- 1 VDS = 10 V VGS = 0 f = 1 MHz ID = 5 A VGS = 4 V RL = 2 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 2SK2329(L), 2SK2329(S) Power vs. Temperature Derating 40 Pch (W) I D (A) 100 50 30 20 10 5 2 1 0.5 0.2 0 50 100 150 Tc (°C) 200 0.1 0.5 Ta = 25 °C 1 2 5 10 20...