2SK2329S
2SK2329S is Silicon N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter
+0.2 9.70 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+0.15 1.50 -0.15
+0.15 5.55 -0.15
0.80+0.1 -0.1
0.127 max
+0.25 2.65 -0.1
+0.15 0.50 -0.15
+0.28 1.50 -0.1
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage
Drain current
Power dissipation Channel temperature Storage temperature
- PW 10 s,Duty Cycle 1%
Symbol VDSS VGSS ID Idp
- PD Tch Tstg
Rating 30 10 10 40 20 150
-55 to +150
Electrical Characteristics Ta = 25
Parameter Drain to source breakdown voltage Gate to source voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance
Drain to source on-state resistance
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Symbol
Testconditons
VDSS ID=10m A,VGS=0
VGSS IG= 200 A,VGS=0
IDSS VDS=25V,VGS=0
IGSS VGS=...
