Overview
- Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline
Datasheets by Manufacturer
- 2SK2559 — VBsemi — N-Channel 200V MOSFET
- 2SK2550 — Toshiba — Silicon N Channel MOS Type Field Effect Transistor
- 2SK2556 — SANYO — N-Channel Silicon MOSFET
- 2SK2554 — Renesas — Silicon N Channel MOS FET
- 2SK2552B — NEC — N-Channel MOSFET
- 2SK2555 — SANYO — N-Channel Silicon MOSFET
- 2SK2552 — Renesas — N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
- 2SK2551 — Toshiba — Silicon N Channel MOS Type Field Effect Transistor
- 2SK2559 — Shindengen — VZ Series Power MOSFET
- 2SK2552C — NEC — MOSFET