Overview
- Low on-resistance R DS(on) = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P
- G 1 2 3
- Drain (Flange)
- Source S 2SK2554
Datasheets by Manufacturer
- 2SK2554 — Renesas — Silicon N Channel MOS FET
- 2SK2550 — Toshiba — Silicon N Channel MOS Type Field Effect Transistor
- 2SK2556 — SANYO — N-Channel Silicon MOSFET
- 2SK2552B — NEC — N-Channel MOSFET
- 2SK2555 — SANYO — N-Channel Silicon MOSFET
- 2SK2552 — Renesas — N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
- 2SK2551 — Toshiba — Silicon N Channel MOS Type Field Effect Transistor
- 2SK2559 — Shindengen — VZ Series Power MOSFET
- 2SK2552C — NEC — MOSFET
- 2SK2557 — SANYO — N-Channel Silicon MOSFET