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2SK2554 Datasheet Silicon N-channel Mos Fet

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2554 Silicon N-Channel MOS FET ADE-208-359 D 5th. Edition Application High speed power.

Key Features

  • Low on-resistance R DS(on) = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW.

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
Renesas Logo 2SK2554 Silicon N Channel MOS FET Renesas

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