2SK2569 Description
2SK2569 Silicon N-Channel MOS FET ADE-208-384 1st. Edition Application Low frequency power switching.
2SK2569 Key Features
- Low on-resistance. R DS(on) = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate drive device. Small package (MPAK)