Datasheet4U.com

2SK2569 Datasheet Silicon N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2569 Silicon N-Channel MOS FET ADE-208-384 1st. Edition Application Low frequency power.

2SK2569 datasheet preview

Datasheet Details

Part number	2SK2569
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	40.94 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK2569_HitachiSemiconductor.pdf

Key Features

Low on-resistance. R DS(on) = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2569 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse).
Pch.
Tch Tstg 2 1 R.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	2SK2569	Silicon N-Channel MOSFET	Renesas

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number	Description
2SK2568	Silicon N-Channel MOSFET
2SK2529	Silicon N-Channel MOSFET
2SK2553	N-Channel MOSFET
2SK2553L	N-Channel MOSFET
2SK2553S	Silicon N Channel MOS FET
2SK2554	Silicon N-Channel MOS FET
2SK2570	Silicon N-Channel MOSFET
2SK2586	Silicon N-Channel MOSFET
2SK2590	Silicon N-Channel MOSFET
2SK2595	Silicon N-Channel MOSFET

2SK2569 Distributor