2SK2569 Description
2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching.
2SK2569 Key Features
- Low on-resistance. RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK)