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2SK2569
Silicon N Channel MOS FET
REJ03G1018-0300 Rev.3.00 Dec 27, 2006
Application
High speed power switching
Features
• • • • Low on-resistance. RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
D 3 1 2 G 1. Source 2. Gate 3. Drain
S
Note:
Marking is "ZN–"
Rev.3.00 Dec 27, 2006 page 1 of 6
Free Datasheet http://www.datasheet4u.com/
2SK2569
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID ID(pulse)*1 Pch*2 Tch Tstg Ratings 50 ±20 0.2 0.
2SK2569 Datasheet
