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2SK2736 Datasheet Silicon N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st.

Key Features

  • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A).
  • 4V gate drive devices.
  • High speed switching Outline TO.
  • 220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2736 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C.

2SK2736 Distributor

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Renesas Logo 2SK2736 Silicon N-Channel MOSFET Renesas

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