2SK2736 Description
2SK2736 Silicon N Channel DV L MOS FET High Speed Power Switching ADE-208-544 1st.
2SK2736 Key Features
- Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A)
- 4V gate drive devices
- High speed switching
2SK2736 is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
2SK2736 | Silicon N-Channel MOSFET |
2SK2736 Silicon N Channel DV L MOS FET High Speed Power Switching ADE-208-544 1st.