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2SK2736
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A)
• 4 V gate drive devices. • High speed switching
Outline
REJ03G1030-0200 (Previous: ADE-208-544)
Rev.2.00 Sep 07, 2005
RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM)
D
G
1. Gate 2. Drain 3. Source
12 3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2736
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2.
2SK2736 Datasheet
