• Part: 2SK2736
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 81.43 KB
Download 2SK2736 Datasheet PDF
Renesas
2SK2736
Features - Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A) - 4 V gate drive devices. - High speed switching Outline REJ03G1030-0200 (Previous: ADE-208-544) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C- FM) 1. Gate 2. Drain 3. Source 12 3 Rev.2.00 Sep 07, 2005 page 1 of 6 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse)- 1 IDR Pch- 2 Tch Tstg Ratings 30 ±20 30 120 30 25 150 - 55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 - - V ID = 10 m A, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 - - V IG = ±100 µA, VDS = 0 Zero...