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2Sk2734 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A).
  • 4V gate drive devices.
  • Large current capacitance ID = 5 A Outline TO-92MOD. ADE-208-520 (Z) 1st. Edition Jun 1997 D G S 32 1 1. Source 2. Drain 3. Gate 2SK2734 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation VDSS VGSS ID I.
  • 1 D(pulse) I DR Pch Ch.

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Datasheet Details

Part number 2Sk2734
Manufacturer Renesas
File Size 143.73 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2Sk2734 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2734 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A Outline TO-92MOD. ADE-208-520 (Z) 1st. Edition Jun 1997 D G S 32 1 1. Source 2. Drain 3. Gate 2SK2734 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation VDSS VGSS ID I *1 D(pulse) I DR Pch Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % Ratings Unit 30 V ±20 V 5 A 20 A 5 A 0.