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2SK2734 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 0.04Ω typ (at VGS = 10 V, I D = 2.5 A).
  • 4V gate drive devices.
  • Large current capacitance ID = 5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SK2734 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse).
  • 1 Ratings 30 ±20 5 20 5 0.9 150.
  • 55 to +150 Unit V V A A A W °C °C Body to drain diode reverse drain c.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2734 Silicon N Channel MOS FET High Speed Power Switching ADE-208-520 1st. Edition Features • Low on-resistance R DS(on) = 0.04Ω typ (at VGS = 10 V, I D = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SK2734 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)* 1 Ratings 30 ±20 5 20 5 0.9 150 –55 to +150 Unit V V A A A W °C °C Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1.