Datasheet4U Logo Datasheet4U.com

K2737 - 2SK2737

Key Features

  • Low on-resistance RDS(on) = 10 mΩ typ.
  • 4V gate drive devices.
  • High speed switching Outline TO.
  • 220CFM ADE-208-533B(Z) 3rd. Edition Jun 1998 D G 123 1. Gate 2. Drain 3. Source S 2SK2737 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Stora.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K2733 2SK2733 Toshiba Semiconductor
K270 Silicon Zener Diodes Aeroflex
K270 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE Knox Inc
K2700 2SK2700 Toshiba Semiconductor
K2708 2SK2708 Sanken

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K2788 2SK2788
K2796 2SK2796

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2737 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM ADE-208-533B(Z) 3rd. Edition Jun 1998 D G 123 1. Gate 2. Drain 3. Source S 2SK2737 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.