K2737 - 2SK2737

Datasheet Summary

Features

Low on-resistance RDS(on) = 10 mΩ typ.
4V gate drive devices.
High speed switching Outline TO.
220CFM ADE-208-533B(Z) 3rd. Edition Jun 1998 D G 123 1. Gate 2. Drain 3. Source S 2SK2737 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Stora.

Hitachi Semiconductor

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Datasheet Details

Part number	K2737
Manufacturer	Hitachi Semiconductor
File Size	44.15 KB
Description	2SK2737
Datasheet	K2737 Datasheet
Additional preview pages of the K2737 datasheet.

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Full PDF Text Transcription

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2SK2737 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM ADE-208-533B(Z) 3rd. Edition Jun 1998 D G 123 1. Gate 2. Drain 3. Source S 2SK2737 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.

Published: Mar 18, 2017 |