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2SK2788
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-538 1st. Edition Features
• Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices.
Outline
UPAK
3
D
2
1
4
G
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2788
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)*
2 1
Ratings 60 ±20 2 4 2 1 150 –55 to +150
Unit V V A A A W °C °C
Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Pch* Tch Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.
K2788 Datasheet
