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K2788 - 2SK2788

Key Features

  • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A).
  • Low drive current.
  • High speed switching.
  • 4V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2788 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse).
  • 2 1 Ratings 60 ±20 2 4 2 1 150.
  • 55 to +150 Unit V V A A A W °C °C Body to drain diode re.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K2737 2SK2737
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2788 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)* 2 1 Ratings 60 ±20 2 4 2 1 150 –55 to +150 Unit V V A A A W °C °C Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Pch* Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.