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K2788 Datasheet 2sk2788

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st.

Key Features

  • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A).
  • Low drive current.
  • High speed switching.
  • 4V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2788 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse).
  • 2 1 Ratings 60 ±20 2 4 2 1 150.
  • 55 to +150 Unit V V A A A W °C °C Body to drain diode re.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
K2737 2SK2737
K2796 2SK2796

K2788 Distributor