K2788 Overview
2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st.
K2788 Key Features
- Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A)
- Low drive current
- High speed switching
- 4V gate drive devices
K2788 datasheet by Hitachi Semiconductor (now Renesas).
| Part number | K2788 |
|---|---|
| Datasheet | K2788-HitachiSemiconductor.pdf |
| File Size | 42.66 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | 2SK2788 |
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2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st.
View all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| K2737 | 2SK2737 |
| K2796 | 2SK2796 |