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K2796 Datasheet 2sk2796

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power.

Key Features

  • Low on-resistance RDS(on) = 0.12Ω typ.
  • 4V gate drive devices.
  • High speed switching Outline DPAK |1 D G S ADE-208-534C (Z) 4th. Edition Jun 1998 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID I Note1.

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