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K2796 - 2SK2796

Datasheet Summary

Features

  • Low on-resistance RDS(on) = 0.12Ω typ.
  • 4V gate drive devices.
  • High speed switching Outline DPAK |1 D G S ADE-208-534C (Z) 4th. Edition Jun 1998 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID I Note1.

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Datasheet Details

Part number K2796
Manufacturer Hitachi Semiconductor
File Size 53.47 KB
Description 2SK2796
Datasheet download datasheet K2796 Datasheet
Additional preview pages of the K2796 datasheet.

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Full PDF Text Transcription

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2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 D G S ADE-208-534C (Z) 4th. Edition Jun 1998 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR I Note3 AP E Note3 AR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Ratings 60 ±20 5 20 5 5 2.
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