2SK2788 Description
2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st.
2SK2788 Key Features
- Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A)
- Low drive current
- High speed switching
- 4V gate drive devices
- Part: 2SK2788
- Manufacturer: Hitachi Semiconductor
- Size: 43.80 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
2SK2788 | Silicon N-Channel MOSFET |