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2SK2788
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A)
Low drive current High speed switching 4 V gate drive devices.
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK)
21 3
4
Preliminary Datasheet
R07DS0511EJ0300 (Previous: REJ03G1033-0200)
Rev.3.00 Jul 27, 2011
D
1. Gate
2. Drain
G
3. Source
4. Drain
S
Note: Marking is “VY”
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation
VDSS VGSS
ID ID(pulse)*1
IDR Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 100 s, duty cycle 10 %
2. When using the alumina ceramic board (12.
2SK2788 Datasheet
