2SK2796
Key Features
- Low on-resistance R DS(on) = 0.12Ω typ.
- 4V gate drive devices.
- High speed switching Outline DPAK |1 4 4
- 1 2 G 3 S 1 2 3
- Drain
- Source
- Part: 2SK2796
- Description: Silicon N Channel MOS FET
- Manufacturer: Hitachi Semiconductor
- Size: 54.65 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SK2796S | Kexin Semiconductor | Silicon N-Channel MOSFET |
| 2SK2796L | Inchange Semiconductor | N-Channel MOSFET |
| 2SK2798 | Shindengen | VX-2 Series Power MOSFET |
| K2792 | ROHM | 2SK2792 |
| 2SK2793 | ROHM | Switching Transistor |
| 2SK2799 | Shindengen | VX-2 Series Power MOSFET |
| K2799 | Shindengen | 2SK2799 |