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2SK2828 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC.
  • DC converter Avalanche ratings Outline TO.
  • 3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2828 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2800 Silicon N Channel MOS FET
2SK2802 Silicon N Channel MOS FET
2SK2851 N-Channel MOSFET
2SK2869 N-Channel MOSFET
2SK2885 Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2828 Silicon N Channel MOS FET High Speed Power Switching ADE-208-514 C (Z) 4th. Edition Feb 1999 Features • • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC–DC converter Avalanche ratings Outline TO–3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2828 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.