2SK2851 Description
2SK2851 Silicon N Channel MOS FET High Speed Power Switching ADE-208-478 1st.
2SK2851 Key Features
- Low on-resistance R DS(on) = 0.055Ω typ. (at VGS = 10 V, I D = 2.5 A)
- 4V gate drive devices
- Large current capacitance ID = 5 A
- Part: 2SK2851
- Manufacturer: Hitachi Semiconductor
- Size: 50.28 KB
Related Hitachi Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 2SK2800 | Silicon N Channel MOS FET |
| 2SK2802 | Silicon N Channel MOS FET |
| 2SK2828 | Silicon N-Channel MOSFET |
| 2SK2869 | N-Channel MOSFET |
| 2SK2885 | Silicon N-Channel MOSFET |