2SK2851 Overview
2SK2851 Silicon N Channel MOS FET High Speed Power Switching ADE-208-478 1st.
2SK2851 Key Features
- Low on-resistance R DS(on) = 0.055Ω typ. (at VGS = 10 V, I D = 2.5 A)
- 4V gate drive devices
- Large current capacitance ID = 5 A
2SK2851 Datasheet Details
| Part number | 2SK2851 |
|---|---|
| Datasheet | 2SK2851_HitachiSemiconductor.pdf |
| File Size | 50.28 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | N-Channel MOSFET |
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