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2SK2851 Datasheet N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2851 Silicon N Channel MOS FET High Speed Power Switching ADE-208-478 1st.

Key Features

  • Low on-resistance R DS(on) = 0.055Ω typ. (at VGS = 10 V, I D = 2.5 A).
  • 4V gate drive devices.
  • Large current capacitance ID = 5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SK2851 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.

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2SK2851 Distributor