Datasheet4U Logo Datasheet4U.com

2SK2980 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 500 mA).
  • 2.5V gate drive devices.
  • Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2980 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS Ratings 30 +12.
  • 10 Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: ID I D(pulse) Pch Tch Tstg Note1 Note2 Unit V V V A A W °.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2980 Silicon N-Channel MOSFET Renesas
2SK2981 SWITCHING N-CHANNEL POWER MOS FET NEC
2SK2983 SWITCHING N-CHANNEL POWER MOS FET NEC
2SK2984 SWITCHING N-CHANNEL POWER MOS FET NEC
2SK2985 N-Channel MOSFET Toshiba Semiconductor

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK291 Silicon N-Channel Junction FET
2SK2912 Silicon N Channel MOS FET
2SK2912L Silicon N Channel MOS FET
2SK2912S Silicon N Channel MOS FET
2SK2922 Silicon N Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2980 Silicon N Channel MOS FET High Speed Power Switching ADE-208-571B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 500 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2980 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS Ratings 30 +12 –10 Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: ID I D(pulse) Pch Tch Tstg Note1 Note2 Unit V V V A A W °C °C 1.0 4 0.8 150 –55 to +150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at when using alumina ceramic board (12.5 x 20 x 0.