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2SK2980 - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 500 mA).
  • 2.5V gate drive devices.
  • Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2980 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS Ratings 30 +12.
  • 10 Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: ID I D(pulse) Pch Tch Tstg Note1 Note2 Unit V V V A A W °.

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Datasheet Details

Part number 2SK2980
Manufacturer Hitachi Semiconductor
File Size 43.36 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK2980 Datasheet
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2SK2980 Silicon N Channel MOS FET High Speed Power Switching ADE-208-571B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 500 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2980 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS Ratings 30 +12 –10 Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: ID I D(pulse) Pch Tch Tstg Note1 Note2 Unit V V V A A W °C °C 1.0 4 0.8 150 –55 to +150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at when using alumina ceramic board (12.5 x 20 x 0.
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