Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-571B (Z) 3rd. Edition Jun 1998 Features
- Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 500 mA)
- 2.5V gate drive devices.
- Small package (MPAK)
Outline
MPAK
3 1
1. Source 2. Gate 3....
