Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA)
- 2.5 V gate drive devices.
- Small package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
Note: Marking is “ZZ- ”
REJ03G1061-0400 (Previous: ADE-208-571B)
Rev.4.00 Sep 07, 2005
D 1. Source 2. Gate 3. Drain
Rev.4.00 Sep 07, 2005 page 1 of...
