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2SK2980 - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA).
  • 2.5 V gate drive devices.
  • Small package (MPAK) Outline.

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Datasheet Details

Part number 2SK2980
Manufacturer Renesas
File Size 79.67 KB
Description Silicon N-Channel MOSFET
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Full PDF Text Transcription

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2SK2980 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 G 2 Note: Marking is “ZZ–” REJ03G1061-0400 (Previous: ADE-208-571B) Rev.4.00 Sep 07, 2005 D 1. Source 2. Gate 3. Drain S Rev.4.00 Sep 07, 2005 page 1 of 6 2SK2980 Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS +12 –10 Drain current Drain peak current Channel dissipation ID 1.0 ID(pulse)Note1 4 Pch Note2 0.8 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.
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