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2SK3150L - N-Channel MOSFET

Key Features

  • Low on-resistance R DS = 45 mΩ typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3150(L),2SK3150(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature.

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📁 Similar Datasheet

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK3150 N-Channel MOSFET
2SK3150S N-Channel MOSFET
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2SK3152 Silicon N-Channel MOSFET
2SK3153 Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3150(L),2SK3150(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 20 60 20 20 40 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.