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2SK3150S - Silicon N-Channel MOSFET

Download the 2SK3150S datasheet PDF. This datasheet also covers the 2SK3150 variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS =45 mΩ typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline REJ03G1075-0400 (Previous: ADE-208-750B) Rev.4.00 Sep 07, 2005.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3150-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK3150S
Manufacturer Renesas
File Size 85.83 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK3150S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3150S N-Channel MOSFET Hitachi Semiconductor
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2SK315 N-Channel MOSFET Sanyo Semicon Device
2SK3151 N-Channel MOSFET Hitachi Semiconductor

Other Datasheets by Renesas

Part Number Description
2SK3150 Silicon N-Channel MOSFET
2SK3150L Silicon N-Channel MOSFET
2SK3151 Silicon N-Channel MOSFET
2SK3152 N-Channel MOSFET
2SK3155 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1075-0400 (Previous: ADE-208-750B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 G D 12 3 123 S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 Sep 07, 2005 page 1 of 8 2SK3150(L), 2SK3150(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.