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2SK3159 Datasheet Silicon N-Channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

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Overview

2SK3159 Silicon N Channel MOS FET High Speed Power Switching ADE-208-774 (Z) Target Specification 1st.

Key Features

  • Low on-resistance R DS = 23 mΩ typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline TO.
  • 3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3159 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS V.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Renesas Logo 2SK3159 N-Channel MOSFET Renesas

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