2SK3159 Overview
2SK3159 Silicon N Channel MOS FET High Speed Power Switching ADE-208-774 (Z) Target Specification 1st.
2SK3159 Key Features
- Low on-resistance R DS = 23 mΩ typ
- High speed switching
- 4 V gate drive device can be driven from 5 V source
2SK3159 Details
| Part number | 2SK3159 |
|---|---|
| Datasheet | 2SK3159_HitachiSemiconductor.pdf |
| File Size | 27.24 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N-Channel MOSFET |
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