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2SK3159
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-774 (Z) Target Specification 1st. Edition February 1999 Features
• Low on-resistance R DS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO–3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Source
2SK3159
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 150 ±20 50 200 50 50 187 125 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
2SK3159 Datasheet
