Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance RDS = 23 mΩ typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
REJ03G1084-0400 Rev.4.00
May 15, 2006
1. Gate 2. Drain
(Flange) 3. Source
Rev.4.00 May 15, 2006 page 1 of...
