Click to expand full text
2SK3159
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 23 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
G
D S
REJ03G1084-0400 Rev.4.00
May 15, 2006
1. Gate 2. Drain
(Flange) 3. Source
Rev.4.00 May 15, 2006 page 1 of 7
2SK3159
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3.
2SK3159 Datasheet
