Datasheet Summary
Silicon N Channel MOS FET High Speed Switching
ADE-208-742 C (Z) 4th.Edition. June 1999 Features
- Low on-resistance R DS = 1.26 Ω typ. (VGS = 10 V , ID = 150 mA) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
- 4 V gate drive device.
- Small package (MPAK)
Outline
MPAK
3 1
1. Source 2. Gate 3....