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2SK3290 - N-Channel MOSFET

Features

  • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VGS = 4 V , ID = 100 mA).
  • 4 V gate drive device.
  • Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3290 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(.

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Datasheet Details

Part number 2SK3290
Manufacturer Hitachi Semiconductor
File Size 39.50 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3290 Datasheet
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Full PDF Text Transcription

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2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition. June 1999 Features • Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VGS = 4 V , ID = 100 mA) • 4 V gate drive device. • Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3290 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings 30 ±20 500 2 500 400 150 –55 to +150 Unit V V mA A mA mW °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.
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