2SK3290 Overview
Key Features
- Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VGS = 4 V , ID = 100 mA)
- 4 V gate drive device
- Small package (MPAK) Outline MPAK 3 1 D 2 G
- Drain S 2SK3290
| Part | 2SK3290 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Hitachi Semiconductor |
| Size | 39.50 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| K3298 | NEC | 2SK3298 |
| 2SK3295 | Kexin Semiconductor | MOS Field Effect Transistor |
| 2SK3296 | Kexin Semiconductor | MOS Field Effect Transistor |
| 2SK3299 | Kexin Semiconductor | MOS Field Effect Transistor |
| 2SK3294 | Kexin Semiconductor | MOS Field Effect Transistor |