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2SK3390 - N-Channel MOSFET

Key Features

  • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz).
  • Compact package capable of surface mounting Outline RP8P D 3 1 G 2 S 2 1 3 1. Gate 2. Source 3. Drain Note: Marking is “IX”. This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK3390 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissip.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK3348 N-Channel MOSFET
2SK3349 N-Channel MOSFET
2SK3378 N-Channel MOSFET
2SK3380 N-Channel MOSFET
2SK3000 Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3390 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-846 (Z) 1st. Edition Aug.2001 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz) • Compact package capable of surface mounting Outline RP8P D 3 1 G 2 S 2 1 3 1. Gate 2. Source 3. Drain Note: Marking is “IX”. This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK3390 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW < 1sec, Tch < 150 °C 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) Pch Tch Tstg Note1 Note2 Ratings 17 ±10 1 2.