2SK3390 - N-Channel MOSFET

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Hitachi Semiconductor

Part number	2SK3390
Manufacturer	Hitachi Semiconductor
File Size	78.48 KB
Description	N-Channel MOSFET
Datasheet	2SK3390 Datasheet
Additional preview pages of the 2SK3390 datasheet.

High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz).
Compact package capable of surface mounting Outline RP8P D 3 1 G 2 S 2 1 3 1. Gate 2. Source 3. Drain Note: Marking is “IX”. This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK3390 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissip.

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Published: Mar 30, 2005 |