2SK3390
2SK3390 is Silicon N-Channel MOSFET manufactured by Renesas.
Features
- High power output, High gain, High efficiency PG = 17 d B, Pout = 6.31 W, ηadd = 60% min. (f = 836 MHz)
- pact package capable of surface mounting
Outline
REJ03G0208-0400 Rev.4.00
Nov 08, 2007
RENESAS Package code : PLSS0003ZA-A (Package name: RP8P)
3 2
Note: Marking is “IX”.
D 3
1 G
2 S
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW < 1sec, Tch < 150°C
2. Value at Tc = 25°C
Symbol VDSS VGSS ID I Note1
D(pulse)
Pch Note2 Tch Tstg
Ratings 17 ±10 1 2.5 20 150
- 45 to +150
(Ta = 25°C)
Unit V V A A W °C °C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Page 1 of 9
Electrical Characteristics
Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Added Efficiency
Symbol IDSS IGSS
VGS(off) Ciss Coss Pout ηadd
Min.
- - 2.2
- - 6.31 60
Typ
- -
- 27.5 10.5
- -
Max. 10 ±5 3.0
- -
- -...
