2SK3390 - Silicon N-Channel MOSFET

Renesas

Key Features

High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. (f = 836 MHz).
Compact package capable of surface mounting Outline REJ03G0208-0400 Rev.4.00 Nov 08, 2007.

2SK3390 silicon n-channel mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	2SK3390
Manufacturer	Renesas
File Size	147.78 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK3390 Datasheet

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Full PDF Text Transcription (Reference)

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2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. (f = 836 MHz) • Compact package capable of surface mounting Outline REJ03G0208-0400 Rev.4.00 Nov 08, 2007 RENESAS Package code : PLSS0003ZA-A (Package name: RP8P) 1 3 2 Note: Marking is “IX”. D 3 1 G 2 S 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW < 1sec, Tch < 150°C 2. Value at Tc = 25°C Symbol VDSS VGSS ID I Note1 D(pulse) Pch Note2 Tch Tstg Ratings 17 ±10 1 2.