2SK435 Datasheet | Hitachi Semiconductor

Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline TO-92 (2) 1. Drain 2. Source 3. Gate 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IG Pch Tch Tstg Ratings 22 - 22 100 10 300 150 - 55 to +150 Unit V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Gate to source breakdown voltage Gate cutoff current Gate to source cutoff voltage Drain current Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure Note: Grade I DSS Symbol V(BR)GSS I GSS VGS(off) I DSS- y fs Ciss Crss NF Min - 22 - - 6 20 - - - Typ - - - - - 9.0 2.8 0.5 Max - - 10 - 2.5 40 - 11.0 4.0 3.0 Unit V n A V m A m S p F p F d B Test conditions I G = - 10 µA, VDS = 0 VGS = - 15 V, VDS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, Pulse test VDS = 5 V, ID = 10 m A, f = 1k Hz VDS = 5 V, VGS = 0, f = 1MHz VDS = 5 V, VGS = 0, f = 1MHz VDS = 5 V, ID = 1 m A, f = 1k Hz, Rg = 1k Ω 1. The 2SK435 is grouped by I DSS as follows. B 6 to 14 C 12 to 22 D 18 to 30 E 26 to 40 Maximum Channel Dissipation Curve 400 Channel Power Dissipation Pch (m W) 20 VGS = 0V Typical Output Characteristics Drain Current ID (m A) - 0.1 - 0.2 -...